|
|
|
| 1 |
8,466,467 |
Organic light-emitting display apparatus and method of manufacturing the
same
|
| 2 |
8,455,360 |
Method for fabricating storage node of semiconductor device
|
| 3 |
8,445,367 |
Methods of manufacturing semiconductor devices
|
| 4 |
8,441,097 |
Methods to form memory devices having a capacitor with a recessed
electrode
|
| 5 |
8,440,525 |
Method for obtaining extreme selectivity of metal nitrides and metal
oxides
|
| 6 |
8,440,524 |
Semiconductor device manufacturing method
|
| 7 |
8,435,905 |
Manufacturing method of semiconductor device, and substrate processing
apparatus
|
| 8 |
8,435,854 |
Top electrode templating for DRAM capacitor
|
| 9 |
8,426,321 |
Weak-link capacitor
|
| 10 |
8,410,535 |
Capacitor and manufacturing method thereof
|
| 11 |
8,409,953 |
Method of manufacturing a semiconductor device
|
| 12 |
8,404,555 |
Fabricating method of semiconductor device
|
| 13 |
8,399,304 |
Thin film capacitor and method of fabrication thereof
|
| 14 |
8,394,697 |
Methods of forming capacitors for semiconductor memory devices
|
| 15 |
8,389,360 |
DRAM layout with vertical FETs and method of formation
|
| 16 |
8,384,190 |
Passivation of integrated circuits containing ferroelectric capacitors and
hydrogen barriers
|
| 17 |
8,384,143 |
Semiconductor device and manufacturing method therefor
|
| 18 |
8,378,409 |
Non-volatile memory device and method for fabricating the same
|
| 19 |
8,372,732 |
Method for fabricating non-volatile memory device
|
| 20 |
8,368,132 |
Ferroelectric memory and manufacturing method thereof
|
| 21 |
8,361,861 |
Semiconductor device and method of manufacturing the same
|
| 22 |
8,343,831 |
Semiconductor device and method of manufacturing the semiconductor device
|
| 23 |
8,343,830 |
Semiconductor device and method for manufacturing the same
|
| 24 |
8,329,533 |
Stacked capacitor for double-poly flash memory
|
| 25 |
8,318,560 |
Methods of forming integrated circuit devices including a capacitor
|
| 26 |
8,313,979 |
Phase change memory cell having vertical channel access transistor
|
| 27 |
8,309,416 |
Semiconductor device with buried bit lines interconnected to
one-side-contact and fabrication method thereof
|
| 28 |
8,309,415 |
Methods and apparatus for increasing memory density using diode layer
sharing
|
| 29 |
8,309,412 |
Method for forming semiconductor device with buried gate structure
|
| 30 |
8,293,600 |
Thermally stabilized electrode structure
|
| 31 |
8,288,212 |
Pixel structure of a thin film transistor liquid crystal display and
fabricating method thereof
|
| 32 |
8,283,235 |
Method of manufacturing semiconductor device
|
| 33 |
8,283,227 |
Method for manufacturing semiconductor memory device
|
| 34 |
8,278,156 |
Spacer double patterning for lithography operations
|
| 35 |
8,273,261 |
Methods of forming semiconductor constructions
|
| 36 |
8,264,022 |
Semiconductor device including contact plug and associated methods
|
| 37 |
8,263,457 |
Methods of forming a plurality of capacitors
|
| 38 |
8,263,456 |
Methods of manufacturing capacitor and semiconductor device including the
same
|
| 39 |
8,255,858 |
Method for adjusting capacitance of capacitors without affecting die area
|
| 40 |
8,253,191 |
Vertically-oriented semiconductor selection device for cross-point array
memory
|
| 41 |
8,247,304 |
Method of manufacturing semiconductor device having capacitor under bit
line structure
|
| 42 |
8,242,551 |
Metal-insulator-metal structure for system-on-chip technology
|
| 43 |
8,241,987 |
Methods of forming capacitors
|
| 44 |
8,241,708 |
Formation of insulator oxide films with acid or base catalyzed hydrolysis
of alkoxides in supercritical carbon dioxide
|
| 45 |
8,232,189 |
Dielectric film manufacturing method
|
| 46 |
8,222,683 |
Semiconductor device and its manufacturing method
|
| 47 |
8,222,105 |
Methods of fabricating a memory device
|
| 48 |
8,217,439 |
DRAM unit cells, capacitors, methods of forming DRAM unit cells, and
methods of forming capacitors
|
| 49 |
8,211,763 |
Methods of forming vertical field effect transistors, vertical field
effect transistors, and DRAM cells
|
| 50 |
8,187,934 |
Reverse construction memory cell
|