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| 1 |
8,445,382 |
Side wall pore sealing for low-k dielectrics
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| 2 |
8,445,377 |
Mechanically robust metal/low-k interconnects
|
| 3 |
8,440,564 |
Schemes for forming barrier layers for copper in interconnect structures
|
| 4 |
8,440,508 |
Hydrogen barrier for ferroelectric capacitors
|
| 5 |
8,426,307 |
Reducing resistivity in interconnect structures of integrated circuits
|
| 6 |
8,420,535 |
Copper interconnection, method for forming copper interconnection
structure, and semiconductor device
|
| 7 |
8,420,531 |
Enhanced diffusion barrier for interconnect structures
|
| 8 |
8,420,528 |
Manufacturing method of a semiconductor device having wirings
|
| 9 |
8,415,249 |
Method of manufacturing semiconductor device
|
| 10 |
8,404,580 |
Methods for fabricating semiconductor devices
|
| 11 |
8,395,264 |
Substrate comprising alloy film of metal element having barrier function
and metal element having catalytic power
|
| 12 |
8,383,509 |
Manufacture method for semiconductor device having improved copper
diffusion preventive function of plugs and wirings made of copper or
copper alloy and semiconductor device of this kind
|
| 13 |
8,383,508 |
Method for fabricating opening
|
| 14 |
8,383,507 |
Method for fabricating air gap interconnect structures
|
| 15 |
8,373,273 |
Methods of forming integrated circuit devices having damascene
interconnects therein with metal diffusion barrier layers and devices
formed thereby
|
| 16 |
8,368,218 |
Adhesive flexible barrier film, method of forming same, and organic
electronic device including same
|
| 17 |
8,367,542 |
Semiconductor device manufacturing method and semiconductor device
manufacturing apparatus
|
| 18 |
8,367,541 |
Semiconductor device suitable for a ferroelectric memory and manufacturing
method of the same
|
| 19 |
8,357,609 |
Dual damascene-like subtractive metal etch scheme
|
| 20 |
8,349,731 |
Methods for forming copper diffusion barriers for semiconductor
interconnect structures
|
| 21 |
8,349,725 |
Method of manufacturing semiconductor device, semiconductor manufacturing
apparatus, and storage medium
|
| 22 |
8,349,724 |
Method for improving electromigration lifetime of copper interconnection
by extended post anneal
|
| 23 |
8,344,513 |
Barrier for through-silicon via
|
| 24 |
8,330,275 |
Interconnect structure for semiconductor devices
|
| 25 |
8,329,569 |
Deposition of ruthenium or ruthenium dioxide
|
| 26 |
8,319,341 |
Semiconductor device with gate structure
|
| 27 |
8,314,494 |
Metal cap layer of increased electrode potential for copper-based metal
regions in semiconductor devices
|
| 28 |
8,310,052 |
Semiconductor device and method for manufacturing same
|
| 29 |
8,309,456 |
Method and system for metal barrier and seed integration
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| 30 |
8,304,340 |
Method for manufacturing stacked contact plugs
|
| 31 |
8,298,934 |
Structure and method of creating entirely self-aligned metallic contacts
|
| 32 |
8,298,933 |
Conformal films on semiconductor substrates
|
| 33 |
8,288,276 |
Method of forming an interconnect structure including a metallic
interfacial layer located at a bottom via portion
|
| 34 |
8,288,275 |
Method forming contact plug for semiconductor device using H2 remote
plasma treatment
|
| 35 |
8,288,273 |
Method for forming a patterned thick metallization atop a power
semiconductor chip
|
| 36 |
8,278,207 |
Methods of manufacturing semiconductor devices
|
| 37 |
8,278,205 |
Semiconductor device and method for manufacturing the same
|
| 38 |
8,273,654 |
Producing a vertical transistor including reentrant profile
|
| 39 |
8,269,347 |
Semiconductor chip, electrode structure therefor and method for forming
same
|
| 40 |
8,258,626 |
Copper interconnection, method for forming copper interconnection
structure, and semiconductor device
|
| 41 |
8,258,057 |
Copper-filled trench contact for transistor performance improvement
|
| 42 |
8,253,182 |
Nonvolatile semiconductor memory and method for fabricating the same
|
| 43 |
8,252,690 |
In situ Cu seed layer formation for improving sidewall coverage
|
| 44 |
8,252,680 |
Methods and architectures for bottomless interconnect vias
|
| 45 |
8,247,321 |
Method of manufacturing semiconductor device, semiconductor device,
electronic instrument, semiconductor manufacturing apparatus, and storage
medium
|
| 46 |
8,247,301 |
Substrate and manufacturing method therefor
|
| 47 |
8,242,015 |
Film forming method and film forming apparatus
|
| 48 |
8,236,687 |
Die-bonding method of LED chip and LED manufactured by the same
|
| 49 |
8,236,683 |
Conductor structure including manganese oxide capping layer
|
| 50 |
8,236,681 |
Manufacturing method of semiconductor integrated circuit device
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