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| 1 |
8,466,064 |
Semiconductor integrated circuit device and method of manufacturing a
semiconductor integrated circuit device
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| 2 |
8,455,352 |
Method for removing native oxide and associated residue from a substrate
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| 3 |
8,409,989 |
Structure and method to fabricate a body contact
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| 4 |
8,358,144 |
Method for manufacturing semiconductor device, semiconductor inspection
device, and program including color imaging of metal silicide
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| 5 |
8,357,611 |
Wiring material, semiconductor device provided with a wiring using the
wiring material and method of manufacturing thereof
|
| 6 |
8,349,718 |
Self-aligned silicide formation on source/drain through contact via
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| 7 |
8,338,292 |
Body contacts for FET in SOI SRAM array
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| 8 |
8,304,319 |
Method for making a disilicide
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| 9 |
8,293,643 |
Method and structure of forming silicide and diffusion barrier layer with
direct deposited film on silicon
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| 10 |
8,258,035 |
Method to improve source/drain parasitics in vertical devices
|
| 11 |
8,236,685 |
Phase change memory device having multiple metal silicide layers and
method of manufacturing the same
|
| 12 |
8,202,799 |
Methods of manufacturing metal-silicide features
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| 13 |
8,173,540 |
Methods of forming silicide regions and resulting MOS devices
|
| 14 |
8,158,473 |
Method for manufacturing a semiconductor device having a silicide region
comprised of a silicide of a nickel alloy
|
| 15 |
8,148,248 |
Semiconductor device and manufacturing method thereof
|
| 16 |
8,084,359 |
Semiconductor package and methods of manufacturing the same
|
| 17 |
8,076,239 |
Semiconductor device and method of manufacturing the same
|
| 18 |
8,030,210 |
Contact barrier structure and manufacturing methods
|
| 19 |
8,021,944 |
Method for fabricating semiconductor device
|
| 20 |
8,003,526 |
Low resistance metal silicide local interconnects and a method of making
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| 21 |
7,985,678 |
Method of manufacturing a semiconductor integrated circuit device
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| 22 |
7,985,668 |
Method for forming a metal silicide having a lower potential for
containing material defects
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| 23 |
7,911,004 |
Semiconductor device and manufacturing method of the same
|
| 24 |
7,906,429 |
Wiring material, semiconductor device provided with a wiring using the
wiring material and method of manufacturing thereof
|
| 25 |
7,879,723 |
Semiconductor device manufacturing method, wiring and semiconductor device
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| 26 |
7,863,192 |
Methods for full gate silicidation of metal gate structures
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| 27 |
7,858,518 |
Method for forming a selective contact and local interconnect in situ
|
| 28 |
7,842,520 |
Method for manufacturing semiconductor device, semiconductor inspection
device, and program including color imaging of metal silicide and
calculations thereof
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| 29 |
7,816,258 |
Method for manufacturing electro-optic device substrate with titanium
silicide regions formed within
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| 30 |
7,816,218 |
Selective deposition of amorphous silicon films on metal gates
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| 31 |
7,811,928 |
Semiconductor devices and fabrication methods thereof
|
| 32 |
7,803,706 |
Semiconductor device manufacturing method and semiconductor device
|
| 33 |
7,799,682 |
Transistor having a locally provided metal silicide region in contact
areas and a method of forming the transistor
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| 34 |
7,799,650 |
Method for making a transistor with a stressor
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| 35 |
7,781,316 |
Methods of manufacturing metal-silicide features
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| 36 |
7,781,296 |
Integrated circuit comprising a capacitor with metal electrodes and
process for fabricating such a capacitor
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| 37 |
7,763,540 |
Method of forming a silicided gate utilizing a CMP stack
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| 38 |
7,754,554 |
Methods for fabricating low contact resistance CMOS circuits
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| 39 |
7,750,471 |
Metal and alloy silicides on a single silicon wafer
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| 40 |
7,737,032 |
MOSFET structure with multiple self-aligned silicide contacts
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| 41 |
7,736,984 |
Method of forming a low resistance semiconductor contact and structure
therefor
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| 42 |
7,732,327 |
Vapor deposition of tungsten materials
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| 43 |
7,719,035 |
Low contact resistance CMOS circuits and methods for their fabrication
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| 44 |
7,709,372 |
Semiconductor device and method for manufacturing the same
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| 45 |
7,696,042 |
Semiconductor capacitor structure and method to form same
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| 46 |
7,682,968 |
Self-aligned metal to form contacts to Ge containing substrates and
structure formed thereby
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| 47 |
7,662,707 |
Method of forming relatively continuous silicide layers for semiconductor
devices
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| 48 |
7,655,557 |
CMOS silicide metal gate integration
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| 49 |
7,651,903 |
CMOS image sensor and method for manufacturing the same
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| 50 |
7,638,427 |
MOS transistor with fully silicided gate
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