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| 1 |
6,109,775 |
Method for adjusting the density of lines and contact openings across a
substrate region for improving the chemical-mechanical polishing of a
thin-film later disposed thereon
|
| 2 |
5,876,838 |
Semiconductor integrated circuit processing wafer having a PECVD
material layer of improved thickness uniformity
|
| 3 |
5,722,877 |
Technique for improving within-wafer non-uniformity of material removal
for performing CMP
|
| 4 |
5,719,084 |
Method for the controlled formation of voids in doped glass dielectric
films
|
| 5 |
5,667,433 |
Keyed end effector for CMP pad conditioner
|
| 6 |
5,628,869 |
Plasma enhanced chemical vapor reactor with shaped electrodes
|
| 7 |
5,624,304 |
Techniques for assembling polishing pads for chemi-mechanical polishing
of silicon wafers
|
| 8 |
5,516,400 |
Techniques for assembling polishing pads for chemical-mechanical
polishing of silicon wafers
|
| 9 |
5,362,353 |
Faraday cage for barrel-style plasma etchers
|
| 10 |
5,310,455 |
Techniques for assembling polishing pads for chemi-mechanical polishing
of silicon wafers
|
| 11 |
5,278,103 |
Method for the controlled formation of voids in doped glass dielectric
films
|
